| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IXGH28N120B IXGT28N120B |
High Voltage IGBT
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS Corporation
|
| IXGH20N120B IXGT20N120B |
High Voltage IGBT
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS Corporation
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP90B |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT35GP120B2DQ2 APT35GP120B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP90K APT15GP90KG |
POWER MOS 7 IGBT
|
Advanced Power Technolo...
Advanced Power Technology
|
